%0 Journal Article
%T The luminescence properties of a novel electron trapped material Sr2SnO4:Sb3+ for optical storage<br>新型电子俘获型光存储材料Sr2SnO4:Sb3+的发光性能研究
%A Wang Zhi-Long
%A Zheng Gui-Seng
%A Wang Shi-Qin
%A Qin Qing-Song
%A Zhou Hong-Liang
%A Zhang Jia-Chi
%A <br>王治龙
%A 郑贵森
%A 王世钦
%A 秦青松
%A 周宏亮
%A 张加驰
%J 物理学报
%D 2012
%I 
%X A novel electron trapped material Sr2SnO4:Sb3+ for optical storage is successfully obtained by conventional solid state method at 1300℃It indicates that the 1S0→1P1（208 nm） and 1S0→3P1（265 nm） transitions of Sb3+ are the most efficient writing light source.Its emission covers 400—700 nm and can be attributed to 3P0,1←→1S0 transition of Sb3+.We can observe yellowish white light and its color coordination is（0.341,0.395）.The thermoluminescence of Sr2SnO4:Sb3+ contains four peaks at about 39℃, 124℃,193℃and 310℃,respectively.The intensity of peak at 39℃is low and thus it has a weak afterglow which can last only 140 s.However,even after putting it in dark for 1 day,the peak at 310℃can still keep 45.6%of its original intensity and can be efficiently stimulated by 980 nm infrared laser.As a conclusion,the Sr2SnO4:Sb3+ is a promising electron trapping material for application in optical storage.
%K Sr2SnO4:Sb3+
%K photostimulated luminescence
%K optical storage<br>Sr2SnO4:Sb3+
%K 红外上转换光激励
%K 光存储
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C47911D0486F0AD467952F&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=59906B3B2830C2C5&sid=1E53AB6B88FFB027&eid=1E53AB6B88FFB027&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10