Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions
高压射频等离子体增强化学气相沉积制备高效率硅薄膜电池的若干关键问题研究

Our recent work on deposition and characterization of hydrogenated microcrystalline silicon(μc-Si:H) thin films and silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions is summarized in this paper.Several key issues are studied in detail:1) process windows for device-qualityμc-Si:H thin films,2) formation mechanism of amorphous silicon incubation layer and the effective methods to reduce the incubation layer thickness,3) modification of crystalUne fraction volume of intrinsicμc-Si:H layers and its influence on the device performance ofμc-Si:H solar cells,4) deposition of high conductive p-typeμc-Si:H window layers with high crystalline fraction volume,and the influence of p-layer on the device performance.After solving the above key issues,a high efficiency of 8.16%is obtained forμc-Si:H sing-junction solar cell with intrinsic layer prepared by RF-PECVD under high-pressure-depletion conditions.When it is used as bottom cell in a-Si:H/μc-Si:H tandem solar cell,the efficiency of tandem cell reaches 11.61%.