%0 Journal Article
%T Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions<br>高压射频等离子体增强化学气相沉积制备高效率硅薄膜电池的若干关键问题研究
%A Hou Guo-Fu
%A Xue Jun-Ming
%A Yuan Yu-Jie
%A Zhang Xiao-Dan
%A Sun Jian
%A Chen Xin-Liang
%A Geng Xin-Hua
%A Zhao Ying
%A <br>侯国付
%A 薛俊明
%A 袁育杰
%A 张晓丹
%A 孙建
%A 陈新亮
%A 耿新华
%A 赵颖
%J 物理学报
%D 2012
%I 
%X Our recent work on deposition and characterization of hydrogenated microcrystalline silicon(μc-Si:H) thin films and silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions is summarized in this paper.Several key issues are studied in detail:1) process windows for device-qualityμc-Si:H thin films,2) formation mechanism of amorphous silicon incubation layer and the effective methods to reduce the incubation layer thickness,3) modification of crystalUne fraction volume of intrinsicμc-Si:H layers and its influence on the device performance ofμc-Si:H solar cells,4) deposition of high conductive p-typeμc-Si:H window layers with high crystalline fraction volume,and the influence of p-layer on the device performance.After solving the above key issues,a high efficiency of 8.16%is obtained forμc-Si:H sing-junction solar cell with intrinsic layer prepared by RF-PECVD under high-pressure-depletion conditions.When it is used as bottom cell in a-Si:H/μc-Si:H tandem solar cell,the efficiency of tandem cell reaches 11.61%.
%K high-pressure RF-PECVD
%K hydrogenated microcrystalline silicon
%K incubation layer
%K hydrogen dilution profiling<br>高压射频等离子体增强化学气相沉积
%K 微晶硅
%K 孵化层
%K 氢稀释调制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9B2BCA8CA9CB30DF12A4964222818B06&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=94C357A881DFC066&sid=697639D3371C3C14&eid=697639D3371C3C14&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19