Measurement of the hole mobility in the blend system by space charge limited current
空间电荷限制电流法测量共混体系中空穴的迁移率

The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and 6, 6]-phenyl C61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.