%0 Journal Article
%T Measurement of the hole mobility in the blend system by space charge limited current<br>空间电荷限制电流法测量共混体系中空穴的迁移率
%A Yu Huang-Zhong
%A <br>於黄忠
%J 物理学报
%D 2012
%I 
%X The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and 6, 6]-phenyl C61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.
%K space charge limited current
%K mobility
%K polymer<br>空间电荷限制电流
%K 迁移率
%K 聚合物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C479114BC7A6DA3371D480&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=5D311CA918CA9A03&sid=CB5EC50184DA1B6D&eid=ADC796E9E4F6CCE9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=24