Magnetotransport property of HgCdTe inversion layer
HgCdTe反型层的磁输运性质

HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation inρxx and quantum Hall plateaus ofρxy are observed,indicating that it is a good transistor.By measuring the magnetoresistance near zero field,we observe the weak antilocalization effect in our sample,suggesting a relatively strong spinorbit coupling.The experimental data can be well fitted by the ILP theory.The fitting-obtained spin-splitting energy increases with increasing electron concentration,and the maximum reaches up to 9.06 meV.From the obtained spin-splitting energy,we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration,which is contrary to the observations in a wide quantum well.