%0 Journal Article
%T Magnetotransport property of HgCdTe inversion layer<br>HgCdTe反型层的磁输运性质
%A Gao Kuang-Hong
%A Wei Lai-Ming
%A Yu Guo-Lin
%A Yang Rui
%A Lin Tie
%A Wei Yan-Feng
%A Yang Jian-Rong
%A Sun Lei
%A Dai Ning
%A Chu Jun-Hao
%A <br>高矿红
%A 魏来明
%A 俞国林
%A 杨睿
%A 林铁
%A 魏彦锋
%A 杨建荣
%A 孙雷
%A 戴宁
%A 褚君浩
%J 物理学报
%D 2012
%I 
%X HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation inρxx and quantum Hall plateaus ofρxy are observed,indicating that it is a good transistor.By measuring the magnetoresistance near zero field,we observe the weak antilocalization effect in our sample,suggesting a relatively strong spinorbit coupling.The experimental data can be well fitted by the ILP theory.The fitting-obtained spin-splitting energy increases with increasing electron concentration,and the maximum reaches up to 9.06 meV.From the obtained spin-splitting energy,we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration,which is contrary to the observations in a wide quantum well.
%K two-dimensional electron gas
%K HgCdTe
%K weak antilocalization effect<br>二维电子气
%K HgCdTe
%K 反弱局域效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4C92C33EB4B06FC5D0E8199F7B0FB5B7&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=0B39A22176CE99FB&sid=A78452A22864784A&eid=A78452A22864784A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=31