Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响

The influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied.Nitrogen ions were implanted into the buried oxide layer with a high-dose of 1016 cm-2.The experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased,compared with the control sampes without nitrogen implantation.It was also found that the post-implantation annealing caused an additional increase of ...