%0 Journal Article
%T Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers<br>高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响
%A Tang Hai-Ma
%A Zheng Zhong-Shan
%A Zhang En-Xia
%A Yu Fang
%A Li Ning
%A Wang Ning-Juan
%A Li Guo-Hua
%A Ma Hong-Zhi
%A <br>唐海马
%A 郑中山
%A 张恩霞
%A 于芳
%A 李宁
%A 王宁娟
%A 李国花
%A 马红芝
%J 物理学报
%D 2011
%I 
%X The influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied.Nitrogen ions were implanted into the buried oxide layer with a high-dose of 1016 cm-2.The experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased,compared with the control sampes without nitrogen implantation.It was also found that the post-implantation annealing caused an additional increase of ...
%K separation by oxygen implantation
%K buried oxide
%K nitrogen implantation
%K positive charge density<br>注氧隔离
%K 埋氧
%K 注氮
%K 正电荷密度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=0E0D16C392E579C5EEDA4F063458A78D&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=94C357A881DFC066&sid=988A467185BD0445&eid=FD207D3C5E9776FA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20