Study of zinc tin oxide thin-film transistor
氧化锌锡薄膜晶体管的研究

Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.