%0 Journal Article
%T Study of zinc tin oxide thin-film transistor<br>氧化锌锡薄膜晶体管的研究
%A Wang Xiong
%A Cai Xi-Kun
%A Yuan Zi-Jian
%A Zhu Xia-Ming
%A Qiu Dong-Jiang
%A Wu Hui-Zhen
%A <br>王雄
%A 才玺坤
%A 原子健
%A 朱夏明
%A 邱东江
%A 吴惠桢
%J 物理学报
%D 2011
%I 
%X Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.
%K zinc tin oxide
%K thin-film transistors
%K field effect mobility<br>氧化锌锡
%K 薄膜晶体管
%K 场效应迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=0E0DDB4FC354E8894A60F3D79C2A3D19&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=38B194292C032A66&sid=E573866D3AAC9994&eid=E4EC39E73004B593&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20