Model of intrinsic carrier concentration of strained Si/(001)Si_(1-x)Ge_x
应变Si/(001)S1－xGex本征载流子浓度模型

There is great interest in using the strained Si CMOS technology lately for carrier mobility enhancement. Intrinsic carrier concentration is the important physical parameter for the characterization of strained Si materials and the determination of the electrical properties of strained Si-based devices. Starting from analyzing the band structure of strained Si/(001)Si_1-xGe_x,the model of its intrinsic carrier concentration related to Ge fraction (x) at 300K was established with the frame of K.P theory,whic...