%0 Journal Article
%T Model of intrinsic carrier concentration of strained Si/(001)Si_(1-x)Ge_x<br>应变Si/(001)S1－xGex本征载流子浓度模型
%A Song Jian-Jun
%A Zhang He-Ming
%A Hu Hui-Yong
%A Dai Xian-Ying
%A Xuan Rong-Xi
%A <br>宋建军
%A 张鹤鸣
%A 胡辉勇
%A 戴显英
%A 宣荣喜
%J 物理学报
%D 2010
%I 
%X There is great interest in using the strained Si CMOS technology lately for carrier mobility enhancement. Intrinsic carrier concentration is the important physical parameter for the characterization of strained Si materials and the determination of the electrical properties of strained Si-based devices. Starting from analyzing the band structure of strained Si/(001)Si_1-xGe_x,the model of its intrinsic carrier concentration related to Ge fraction (x) at 300K was established with the frame of K.P theory,whic...
%K strained Si
%K effective densities of states
%K intrinsic carrier concentration<br>应变Si，
%K 有效态密度，
%K 本征载流子浓度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=67DDA6C29F1A4AD426E8DF08DF3A2E5D&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=38B194292C032A66&sid=13AD3798DE81DFD6&eid=03ABEE521EC3BA7B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=8