Theoretical study on strain compensation layer for growth of quantum dots
应变补偿层对量子点生长影响的理论研究

The optical properties of quantum dots have a close relationship with the size fluctuation,density,strain filed distribution of the dots and the spacer layer thickness. InAs/GaAs quantum dot with GaNXAs 1-X strain compensation layers (SCL) is theoretically investigated for improving the crystal quality. The reduction effects of the spacer thickness are discussed quantitatively. The influence of the location and the N concentration of the GaNXAs 1-X SCL on compensation of the strain formed on quantum dots (Q...