%0 Journal Article
%T Theoretical study on strain compensation layer for growth of quantum dots<br>应变补偿层对量子点生长影响的理论研究
%A Feng Hao
%A Yu Zhong-Yuan
%A Liu Yu-Min
%A Lu Peng-Fei
%A Jia Bo-Yong
%A Yao Wen-Jie
%A Tian Hong-D
%A Zhao Wei
%A Xu Zi-Huan
%A <br>冯昊
%A 俞重远
%A 刘玉敏
%A 芦鹏飞
%A 贾博雍
%A 姚文杰
%A 田宏达
%A 赵伟
%A 徐子欢
%J 物理学报
%D 2010
%I 
%X The optical properties of quantum dots have a close relationship with the size fluctuation,density,strain filed distribution of the dots and the spacer layer thickness. InAs/GaAs quantum dot with GaNXAs 1-X strain compensation layers (SCL) is theoretically investigated for improving the crystal quality. The reduction effects of the spacer thickness are discussed quantitatively. The influence of the location and the N concentration of the GaNXAs 1-X SCL on compensation of the strain formed on quantum dots (Q...
%K strain compensation
%K quantum dot<br>应变补偿，
%K 量子点
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A3A36BB310FEE7532072C48444B94747&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=0B39A22176CE99FB&sid=849F08713EB6820A&eid=BDEE8BA20F4733DB&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=0