Analysis and design of semiconductor detector for high-power terahertz pulse
高功率太赫兹脉冲半导体探测器的分析与设计

A 0. 14 THz high-power terahertz pulse detector based on hot electron effect in semiconductors is designed in this paper. First,the working principle of the detector is analyzed and its relative sensitivity is derived according to the structural characteristics of the detector. Then a three-dimensional finite-difference time-domain method is used to simulate the voltage standing wave ratio (VSWR) and relative sensitivity in a linear region. With optimized structural parameters, the VSWR of the designed dete...