%0 Journal Article
%T Analysis and design of semiconductor detector for high-power terahertz pulse<br>高功率太赫兹脉冲半导体探测器的分析与设计
%A Wang Guang-Qiang
%A Wang Jian-Guo
%A Tong Chang-Jiang
%A Li Xiao-Ze
%A Wang Xue-Feng
%A <br>王光强
%A 王建国
%A 童长江
%A 李小泽
%A 王雪锋
%J 物理学报
%D 2011
%I 
%X A 0. 14 THz high-power terahertz pulse detector based on hot electron effect in semiconductors is designed in this paper. First,the working principle of the detector is analyzed and its relative sensitivity is derived according to the structural characteristics of the detector. Then a three-dimensional finite-difference time-domain method is used to simulate the voltage standing wave ratio (VSWR) and relative sensitivity in a linear region. With optimized structural parameters, the VSWR of the designed dete...
%K high-power terahertz pulse
%K detector
%K hot electron
%K sensitivity<br>高功率太赫兹脉冲
%K 探测器
%K 热电子
%K 灵敏度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=68B3A3225EFE3E86C9B9BA82A05CAEC1&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=38B194292C032A66&sid=FE4C867AE2074B83&eid=EB552E4CFC85690B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=16