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物理学报  2010 

Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode
反射式负电子亲和势GaN光电阴极量子效率衰减机理研究

Keywords: negative elctron affinity,GaN photocathode,quantum efficiency,surface barrier
负电子亲和势
,GaN光电阴极,量子效率,表面势垒

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Abstract:

Aimming at the decay tendency of reflection-mode negative electron affinity(NEA) GaN photocathode and the different decay speeds of quantum efficiency corresponding to the different wave bands,and referring to the decay tendency of quantum efficiency curve provided by foreign authors for reflection-mode NEA GaN photocathode,the quantum efficiency decay mechanism for reflection-mode NEA GaN photocathode was studied.The surface model GaN(Mg) :Cs]:O-Cs for GaN photocathode after being activated with cesium an...

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