%0 Journal Article
%T Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode<br>反射式负电子亲和势GaN光电阴极量子效率衰减机理研究
%A Qiao Jian-Liang
%A Chang Ben-Kang
%A Du Xiao-Qing
%A Niu Jun
%A Zou Ji-Jun
%A <br>乔建良
%A 常本康
%A 杜晓晴
%A 牛军
%A 邹继军
%J 物理学报
%D 2010
%I 
%X Aimming at the decay tendency of reflection-mode negative electron affinity(NEA) GaN photocathode and the different decay speeds of quantum efficiency corresponding to the different wave bands,and referring to the decay tendency of quantum efficiency curve provided by foreign authors for reflection-mode NEA GaN photocathode,the quantum efficiency decay mechanism for reflection-mode NEA GaN photocathode was studied.The surface model GaN(Mg) :Cs]:O-Cs for GaN photocathode after being activated with cesium an...
%K negative elctron affinity
%K GaN photocathode
%K quantum efficiency
%K surface barrier<br>负电子亲和势
%K GaN光电阴极
%K 量子效率
%K 表面势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F1168FF66A95628BDA96B8E7BF011EBC&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=E158A972A605785F&sid=878E98F2BC06CA48&eid=2EE8C81DB5D48A50&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20