Characteristics of a SiC SBD with semi-superjunction structure
具有部分超结的新型SiC SBD特性分析

A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed,which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results ...