%0 Journal Article
%T Characteristics of a SiC SBD with semi-superjunction structure<br>具有部分超结的新型SiC SBD特性分析
%A Yang Yin-Tang
%A Geng Zhen-Hai
%A Duan Bao-Xing
%A Jia Hu-Jun
%A Yu Cen
%A Ren Li-Li
%A <br>杨银堂
%A 耿振海
%A 段宝兴
%A 贾护军
%A 余涔
%A 任丽丽
%J 物理学报
%D 2010
%I 
%X A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed,which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results ...
%K SiC SBD
%K super junction
%K specific on-resistance
%K breakdown voltage<br>SiC肖特基二极管，
%K super
%K junction，
%K 导通电阻，
%K 击穿电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=EF22B688FA1E12D49B2E2EB937760FBC&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=CA4FD0336C81A37A&sid=CDC418F38C4BFD60&eid=18F040DBCB74FFF9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0