Device fabrication of semi-insulating surface-plasmon terahertz quantum-cascade lasers
半绝缘等离子体波导太赫兹量子级联激光器工艺研究

The active region of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser (THz QCL) is grown by gas-source molecular beam epitaxy. The device fabrication process of semi-insulating surface-plasmon THz QCL is studied in detail. The electrical and optical characteristics of the fabricated THz QCL device are measured using a far-infrared Fourier transform infrared spectrometer with a deuterated triglycerine sulfate far-infrared detector. At 10 K,the measured lasing frequency is 3.2 THz and the thresh...