%0 Journal Article
%T Device fabrication of semi-insulating surface-plasmon terahertz quantum-cascade lasers<br>半绝缘等离子体波导太赫兹量子级联激光器工艺研究
%A Li Hu
%A Han Ying-Jun
%A Tan Zhi-Yong
%A Zhang Rong
%A Cao Jun-Cheng
%A <br>黎华
%A 韩英军
%A 谭智勇
%A 张戎
%A 曹俊诚
%J 物理学报
%D 2010
%I 
%X The active region of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser (THz QCL) is grown by gas-source molecular beam epitaxy. The device fabrication process of semi-insulating surface-plasmon THz QCL is studied in detail. The electrical and optical characteristics of the fabricated THz QCL device are measured using a far-infrared Fourier transform infrared spectrometer with a deuterated triglycerine sulfate far-infrared detector. At 10 K,the measured lasing frequency is 3.2 THz and the thresh...
%K terahertz
%K quantum-cascade laser
%K waveguide
%K device process<br>太赫兹，
%K 量子级联激光器，
%K 波导，
%K 器件工艺
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=246894F8F622DF69574CF49607F36BB9&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=38B194292C032A66&sid=31EF1FA369BC6521&eid=CAA85A92D7D80185&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17