Coulomb oscillations effect in dual gate controlled silicon nanowire
双栅调控的硅量子线中的库仑振荡效应

The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.