%0 Journal Article
%T Coulomb oscillations effect in dual gate controlled silicon nanowire<br>双栅调控的硅量子线中的库仑振荡效应
%A Zhang Xian-Gao
%A Fang Zhong-Hui
%A Chen Kun-Ji
%A Qian Xin-Ye
%A Liu Guang-Yuan
%A Xu Jun
%A Huang Xin-Fan
%A He Fei
%A <br>张贤高
%A 方忠慧
%A 陈坤基
%A 钱昕晔
%A 刘广元
%A 徐骏
%A 黄信凡
%A 何飞
%J 物理学报
%D 2011
%I 
%X The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.
%K Coulomb oscillations
%K single electron effect
%K silicon nanowire<br>库仑振荡
%K 单电子效应
%K 硅量子线
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=DC0EF827D2DEAFDBDB5F3BAF375EF2DA&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=0B39A22176CE99FB&sid=8E3E2BC8C3B6DE67&eid=8E3E2BC8C3B6DE67&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15