全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
物理学报  2009 

Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes
InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析

Keywords: InGaN/GaN
InGaN/GaN,
,发光二极管,,数值模拟,,量子点模型

Full-Text   Cite this paper   Add to My Lib

Abstract:

A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133