%0 Journal Article
%T Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes<br>InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析
%A Li Wei-Jun
%A Zhang Bo
%A Xu Wen-Lan
%A Lu Wei
%A <br>李为军
%A 张波
%A 徐文兰
%A 陆卫
%J 物理学报
%D 2009
%I 
%X A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.
%K InGaN/GaN<br>InGaN/GaN，
%K 发光二极管，
%K 数值模拟，
%K 量子点模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6e709dc38fa1d09a4b578dd0906875b5b44d4d294832bb8e&cid=47ea7cfddebb28e0&jid=29df2cb55ef687e7efa80dfd4b978260&aid=1f0b67e2fc625a47bcd41f5e2aaa1966&yid=de12191fbd62783c&vid=9ffcc7af50caebf7&iid=94c357a881dfc066&sid=5b66b20173cd4852&eid=a6dfa260c7ee2206&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0