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物理学报  2009 

Improving the quantum well properties with n-type InGaN/GaN superlattices layer
引入n型InGaN/GaN超晶格层提高量子阱特性研究

Keywords: InGaN/GaN multiple quantum well,double crystal X-ray diffraction,atomic force microscopy,photoluminescence
InGaN/GaN多量子阱,
,原子力显微镜,X射线双晶衍射,,光致发光

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Abstract:

InGaN/GaN quantum wells have been grown by metal-organic chemical vapor deposition. InGaN/GaN quantum well with n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer were studied. By introducing n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer, the strain in quantum well active area was released, the surface morphology was improved and the density of V-type defect was redued. It was also found that the multiple quantum well photoluminescence intensity and the radiation efficiency of light emitting diodes were both higher than that of the structure without InGaN/GaN superlattice layer.

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