%0 Journal Article
%T Improving the quantum well properties with n-type InGaN/GaN superlattices layer<br>引入n型InGaN/GaN超晶格层提高量子阱特性研究
%A Xing Yan-Hui
%A Deng Jun
%A Han Jun
%A Li Jian-Jun
%A Shen Guang-Di
%A <br>邢艳辉
%A 邓军
%A 韩军
%A 李建军
%A 沈光地
%J 物理学报
%D 2009
%I 
%X InGaN/GaN quantum wells have been grown by metal-organic chemical vapor deposition. InGaN/GaN quantum well with n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer were studied. By introducing n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer, the strain in quantum well active area was released, the surface morphology was improved and the density of V-type defect was redued. It was also found that the multiple quantum well photoluminescence intensity and the radiation efficiency of light emitting diodes were both higher than that of the structure without InGaN/GaN superlattice layer.
%K InGaN/GaN multiple quantum well
%K double crystal X-ray diffraction
%K atomic force microscopy
%K photoluminescence<br>InGaN/GaN多量子阱，
%K 原子力显微镜
%K X射线双晶衍射，
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F965CD4CFE0A4C8C8653F063444025F3&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=CA4FD0336C81A37A&sid=C7461453A367FC85&eid=240CB58995465C01&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15