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物理学报 2007
The growth mechanism of monocrystal aluminum nitride nanowires at low temperature
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Abstract:
In a stainless steel autoclave of 25ml capacity, pure hexagonal aluminum nitride (h-AlN) nanowire has been successfully synthesized by direct reaction of AlCl3 with NaN3 in non-solvent system at low temperature. The obtained grayish-white powder is characterized by high-resolution transmission election microscopy, which shows that the grayish-white products consist of long straight-wires with diameter from 40nm to 60nm and the longest ones were up to several micrometers. The electron diffraction and XRD analysis indicat that the AlN manowire has hexagonal/cubicl monocrystal structure. A possible growth mechanism for h-AlN nanowire is disscussed.
