%0 Journal Article
%T The growth mechanism of monocrystal aluminum nitride nanowires at low temperature<br>低温条件下单晶氮化铝纳米线生长机理的研究
%A Chen Guang-De
%A Yan Guo-Jun
%A Ye Hong-Gang
%A <br>吕惠民
%A 陈光德
%A 颜国君
%A 耶红刚
%A Lü Hui-Min
%A Chen Guang-De
%A Yan Guo-Jun
%A Ye Hong-Gang
%J 物理学报
%D 2007
%I 
%X In a stainless steel autoclave of 25ml capacity, pure hexagonal aluminum nitride (h-AlN) nanowire has been successfully synthesized by direct reaction of AlCl3 with NaN3 in non-solvent system at low temperature. The obtained grayish-white powder is characterized by high-resolution transmission election microscopy, which shows that the grayish-white products consist of long straight-wires with diameter from 40nm to 60nm and the longest ones were up to several micrometers. The electron diffraction and XRD analysis indicat that the AlN manowire has hexagonal/cubicl monocrystal structure. A possible growth mechanism for h-AlN nanowire is disscussed.
%K h-AlN
%K nanowire
%K XRD
%K TEM<br>六方单晶氮化铝
%K 纳米线
%K X射线衍射
%K 透射电子显微镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3ADEF84547C5FDBE&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=94C357A881DFC066&sid=33B0BD29DD85F6D8&eid=4F1F993A6CC458B6&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17