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物理学报  2007 

Electron irradiation induced defects in high temperature annealed InP single crystal
高温退火后非掺杂磷化铟材料的电子辐照缺陷

Keywords: InP,electron irradiation,defect
磷化铟
,电子辐照,缺陷

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Abstract:

Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper.In addition to Fe acceptor,there is no obvious defect peak in the sample before irradiation,whereas five defect peaks with activation energies of 0.23 eV,0.26 eV,0.31 eV,0.37 eV and 0.46 eV have been detected after irradiation.InP annealed in P ambient has more thermally induced defects,and the defects induced by electron irradiation have characteristics of complex defect.After irradiation,carrier concentration and mobility of the samples have suffered obvious changes.Under the same condition,electron irradiation induced defects have fast recovery behavior in the FeP_2 ambient annealed InP.The nature of defects,as well as their recovery mechanism and influence on material property have been discussed from the results.

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