%0 Journal Article
%T Electron irradiation induced defects in high temperature annealed InP single crystal<br>高温退火后非掺杂磷化铟材料的电子辐照缺陷
%A Wang Bo
%A Zhao You-Wen
%A Dong Zhi-Yuan
%A Deng Ai-Hong
%A Miao Shan-Shan
%A Yang Jun
%A <br>王 博
%A 赵有文
%A 董志远
%A 邓爱红
%A 苗杉杉
%A 杨 俊
%J 物理学报
%D 2007
%I 
%X Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper.In addition to Fe acceptor,there is no obvious defect peak in the sample before irradiation,whereas five defect peaks with activation energies of 0.23 eV,0.26 eV,0.31 eV,0.37 eV and 0.46 eV have been detected after irradiation.InP annealed in P ambient has more thermally induced defects,and the defects induced by electron irradiation have characteristics of complex defect.After irradiation,carrier concentration and mobility of the samples have suffered obvious changes.Under the same condition,electron irradiation induced defects have fast recovery behavior in the FeP_2 ambient annealed InP.The nature of defects,as well as their recovery mechanism and influence on material property have been discussed from the results.
%K InP
%K electron irradiation
%K defect<br>磷化铟
%K 电子辐照
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=50051FCC55E1341D&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=38B194292C032A66&sid=2E97FDBA239991ED&eid=BF7851EF606736C9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19