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物理学报  2008 

Influences of flux and interruption on InAs/GaAs quantum dot superlattice growth
沉积速率和生长停顿对InAs/GaAs量子点超晶格生长影响的综合分析

Keywords: kinetic Monte Carlo simulation,quantum dots superlattice,epitaxial growth
动力学蒙特卡罗模拟,
,量子点超晶格,,外延生长

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Abstract:

Kinetic Monte Carlo simulations are applied to study the growth of self-assembled vertical ordering InAs quantum dot superlattice on GaAs substrate. The study is focused on the influences of flux and interruption time at the initial stage when the first sub-monolayer is forming on the wetting layer. We demonstrate that uniform sized and regularly ordered island arrays can be obtained by controlling flux and interruption time, by means of studying the surface morphology, average island size, island size distribution and the standard deviation of island size distribution comprehensively. The size and order of island arrays will greatly affect the location and size of quantum dots in subsequent three-dimensional growth.

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