The extraction method for trap parameters in 4H-SiC MESFETs
4H-SiC 射频MESFET中陷阱参数的提取方法

The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design and processing.