%0 Journal Article
%T The extraction method for trap parameters in 4H-SiC MESFETs<br>4H-SiC 射频MESFET中陷阱参数的提取方法
%A Zhang Yi-Men
%A Zhang Yu-Ming
%A Che Yong
%A Wang Yue-Hu
%A Chen Liang
%A <br>吕红亮
%A 张义门
%A 张玉明
%A 车 勇
%A 王悦湖
%A 陈 亮
%J 物理学报
%D 2008
%I 
%X The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design and processing.
%K silicon carbide
%K deep level trap
%K frequency dispersion<br>碳化硅，
%K 深能级陷阱，
%K 频率偏移
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3E57E490B521CEF53FC358C76E02E343&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=94C357A881DFC066&sid=47BC2B59C2090B24&eid=5168CA10F271994D&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11