Study on self-healing effect in ultra deep submicron PMOSFET''''s
超深亚微米PMOSFET的自愈合效应

The NBTI effect is studied in this paper with emphasis on its self-healing phenomenon. The recovery of threshold voltage shift with stress times and recovery time are studied. It is found that the recovery is mainly related to the re-passivation by hydrogen of interface states that occurred after the stress is stopped.