%0 Journal Article
%T Study on self-healing effect in ultra deep submicron PMOSFET''''s<br>超深亚微米PMOSFET的自愈合效应
%A Li Jing
%A Liu Hong-Xia
%A Hao Yue
%A <br>李晶
%A 刘红侠
%A 郝跃
%J 物理学报
%D 2006
%I 
%X The NBTI effect is studied in this paper with emphasis on its self-healing phenomenon. The recovery of threshold voltage shift with stress times and recovery time are studied. It is found that the recovery is mainly related to the re-passivation by hydrogen of interface states that occurred after the stress is stopped.
%K PMOSFET<br>负偏置温度不稳定性效应
%K 自愈合效应
%K 应力时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=73970C235B272E25&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=94C357A881DFC066&sid=BABEC404D527B47C&eid=8BBC50AE1A1F67D9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=8