Degradation of tunnel oxide in E2PROM under constant current stress
恒流应力下E2PROM隧道氧化层的退化特性研究

The degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress was studied using capacitors. The degradation is a function of constant current and time, which depends more on the magnitude of constant current. Thus the degradation is a strong function of injected charge density Qinj . Positive charge trapping is usually dominant at lower Qinj followed by negative charge trapping at higher Qinj, causing a reversal of gate voltage change.