%0 Journal Article
%T Degradation of tunnel oxide in E2PROM under constant current stress<br>恒流应力下E2PROM隧道氧化层的退化特性研究
%A Li Lei-Lei
%A Liu Hong-Xi
%A Yu Zong-Guang
%A Hao Yue
%A <br>李蕾蕾
%A 刘红侠
%A 于宗光
%A 郝 跃
%J 物理学报
%D 2006
%I 
%X The degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress was studied using capacitors. The degradation is a function of constant current and time, which depends more on the magnitude of constant current. Thus the degradation is a strong function of injected charge density Qinj . Positive charge trapping is usually dominant at lower Qinj followed by negative charge trapping at higher Qinj, causing a reversal of gate voltage change.
%K E^2 PROM
%K tunnel oxide
%K degradation
%K constant current stress<br>E2PROM
%K 隧道氧化层，
%K 退化，
%K 恒流应力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=DBCD5ECDFD7B591E&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=94C357A881DFC066&sid=8F9A6804D20BC127&eid=D40FA2A708B1A663&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10