Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Si调制掺杂AlGaN/GaN异质结磁阻拍频现象

Magneto-transport measurements have been carried out on a Si modulation-doped Al 0.22 Ga 0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.