%0 Journal Article
%T Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure<br>Si调制掺杂AlGaN/GaN异质结磁阻拍频现象
%A 姚 炜
%A 仇志军
%A 桂永胜
%A 郑泽伟
%A 吕 捷
%A 唐 宁
%A 沈 波
%A 褚君浩
%J 物理学报
%D 2005
%I 
%X Magneto-transport measurements have been carried out on a Si modulation-doped Al 0.22 Ga 0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.
%K AlGaN/GaN heterostructure
%K SdH oscillator
%K magneto-intersubband scattering
%K beating patterns<br>AlGaN/GaN异质结构，
%K SdH振荡，
%K 磁致子带间散射，
%K 磁阻拍频
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3A203985EA56F062&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=94C357A881DFC066&sid=F7AB88AAA4F920BD&eid=9FD29DE998034EE4&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11