Optical constants of Ge nanolayers in oxidation of SiGe alloys determined by ellipsometry
激光照射下的低温氧化生成锗的纳米结构及其特性

We investigate the oxidation behavior of Si 1-xGe x allo ys (x=0. 005,0.02,0.05,0.15 and 0.25). A new ellipsometric method is used for the gene rating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were de termined by ellipsometry. The thickness and origin of the Ge bi_nanolayer were f ound. A new peak in photoluminescence PL spectra was discovered, which is relate d to the Ge bi_nano layer (thickness: 0.8\_1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete th e PL spectrum and the nanostructure mechanism in the oxide.