%0 Journal Article
%T Optical constants of Ge nanolayers in oxidation of SiGe alloys determined by ellipsometry<br>激光照射下的低温氧化生成锗的纳米结构及其特性
%A Huang Wei-Qi
%A Liu Shi-Rong
%A <br>黄伟其
%A 刘世荣
%J 物理学报
%D 2005
%I 
%X We investigate the oxidation behavior of Si 1-xGe x allo ys (x=0. 005,0.02,0.05,0.15 and 0.25). A new ellipsometric method is used for the gene rating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were de termined by ellipsometry. The thickness and origin of the Ge bi_nanolayer were f ound. A new peak in photoluminescence PL spectra was discovered, which is relate d to the Ge bi_nano layer (thickness: 0.8\_1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete th e PL spectrum and the nanostructure mechanism in the oxide.
%K ellipsometry
%K Ge nanostructures
%K PL spectra
%K quantum confinement<br>高精度椭偏仪，
%K 锗的纳米结构，
%K PL光谱，
%K 量子受限
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=683F6EE07A65F96F&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=0B39A22176CE99FB&sid=8115E88DD41C4B46&eid=816AB2919A4FEDD7&journal_id=1000-3290&journal_name=物理学报&referenced_num=6&reference_num=7