Effect on optical band-gap of transparent and conductive CdIn2O4 thin film due to defects-induced burstein-moss and band-gap narrowing characteristics
由缺陷引起的Burstein-Moss和带隙收缩效应对CdIn2O4透明导电薄膜光带隙的影响

Transparent and conductive oxides CdIn 2O 4 (CIO) thin films were prepared by RF reactive sputtering from a Cd-In alloy target in Ar O 2 atmosphere. By the analysis and measurements of transmittance spectra and Hall_effect of different samples prepared at different substrate temperatures and post_deposition anneali ng in an Ar gas flow, it was found that the carrier density increases with the decrease of substrate temperature, but the absorption edge shows an abrupt change from a blu e_shift to a red_shift. Theoretically, the paper formulated the effect on band s tructur e due to higher density of point defects, it embodies the band_tailing, Burstein _Moss (B_M) shift and band_gap narrowing. In addition,density of ionized impurity substrate temperature induced will affec t the carrier mobility.The hole density impurity_induced will infl uences the magnitude of optical band_gap and transmittance of light. Since extra polation method does not fit degenerate materials, a more accurate method of obt aining band_gap is the method of curve fitting.