%0 Journal Article
%T Effect on optical band-gap of transparent and conductive CdIn2O4 thin film due to defects-induced burstein-moss and band-gap narrowing characteristics<br>由缺陷引起的Burstein-Moss和带隙收缩效应对CdIn2O4透明导电薄膜光带隙的影响
%A San Hai-Sheng
%A Li Bin
%A Feng Bo-Xue
%A He Yu-Yang
%A Chen Chong
%A <br>伞海生
%A 李 斌
%A 冯博学
%A 何毓阳
%A 陈 冲
%J 物理学报
%D 2005
%I 
%X Transparent and conductive oxides CdIn 2O 4 (CIO) thin films were prepared by RF reactive sputtering from a Cd-In alloy target in Ar O 2 atmosphere. By the analysis and measurements of transmittance spectra and Hall_effect of different samples prepared at different substrate temperatures and post_deposition anneali ng in an Ar gas flow, it was found that the carrier density increases with the decrease of substrate temperature, but the absorption edge shows an abrupt change from a blu e_shift to a red_shift. Theoretically, the paper formulated the effect on band s tructur e due to higher density of point defects, it embodies the band_tailing, Burstein _Moss (B_M) shift and band_gap narrowing. In addition,density of ionized impurity substrate temperature induced will affec t the carrier mobility.The hole density impurity_induced will infl uences the magnitude of optical band_gap and transmittance of light. Since extra polation method does not fit degenerate materials, a more accurate method of obt aining band_gap is the method of curve fitting.
%K radio-frequency reactive sputtering
%K transparent and conductive CdIn
%K 2O
%K 4 thin films
%K Burstein_Moss shift
%K band-gap narrowing
%K electrical propert ies
%K optical properties<br>射频反应溅射，
%K CdIn2O4透明导电薄膜，
%K BursteinMoss漂移，
%K 带隙收缩，
%K 电学性
%K 质，
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=76E49FCBFF232EA1&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=0B39A22176CE99FB&sid=043C7D0F3F6AC1B3&eid=BCCCE1B88B87184D&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=14