Study on electroluminescence spectra of In xGa1- xN/GaN-MQWs materials with high indium contents
高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究

In this work, the abnormal double-peak in the electroluminescence spectra of In xGa1-xN/GaN multiple quantum wells (MQWs) light emitting d iode s tructure materials with high indium contents was studied under different injecti on currents. The results show that the screening of internal electric field by i njection current plays an important role in the radiation recombination process of InxGa1-xN/GaN-MQWs materials.