%0 Journal Article
%T Study on electroluminescence spectra of In xGa1- xN/GaN-MQWs materials with high indium contents<br>高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究
%A Shao Jia-Ping
%A Hu Hui
%A Guo Wen-Ping
%A Wang Lai
%A Luo Yi
%A Sun Chang-Zheng
%A Hao Zhi-Biao
%A <br>邵嘉平
%A 胡 卉
%A 郭文平
%A 汪 莱
%A 罗 毅
%A 孙长征
%A 郝智彪
%J 物理学报
%D 2005
%I 
%X In this work, the abnormal double-peak in the electroluminescence spectra of In xGa1-xN/GaN multiple quantum wells (MQWs) light emitting d iode s tructure materials with high indium contents was studied under different injecti on currents. The results show that the screening of internal electric field by i njection current plays an important role in the radiation recombination process of InxGa1-xN/GaN-MQWs materials.
%K InxGa1-xN/GaN-MQWs
%K electroluminescence spectra
%K internal
%K field<br>InxGa1-xN/GaN多量子阱
%K 电致荧光谱
%K 内建电场
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4D46218F26347D54&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=5D311CA918CA9A03&sid=12BBBF13EEBBAA7C&eid=F70C3F73C791247C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=23