Field-induced displacement properties of nanoscale domain structure in PZT thin film
PZT铁电薄膜纳米尺度铁电畴的场致位移特性

Nanoscale characterization of field induced displacement was made in compositionally graded PZT thin film according to the inverse piezoelectric effects by SFM in contact mode. The nanoscale piezoelectric displacement electric field butterfly loop was obtained due to the combined contribution from linear piezoelectric effect and domain switching effect, which substantiate nanoscale validity of Caspari Merz theory. The nanoscale imprint phenomena were also observed in the thin film.