%0 Journal Article
%T Field-induced displacement properties of nanoscale domain structure in PZT thin film<br>PZT铁电薄膜纳米尺度铁电畴的场致位移特性
%A Zeng Hua-Rong
%A Yu Han-Feng
%A Chu Rui-Qing
%A Li Guo-Rong
%A Yin Qing-Rui
%A Tang Xin-Gui
%A <br>曾华荣
%A 余寒峰
%A 初瑞清
%A 李国荣
%A 殷庆瑞
%A 唐新桂
%J 物理学报
%D 2005
%I 
%X Nanoscale characterization of field induced displacement was made in compositionally graded PZT thin film according to the inverse piezoelectric effects by SFM in contact mode. The nanoscale piezoelectric displacement electric field butterfly loop was obtained due to the combined contribution from linear piezoelectric effect and domain switching effect, which substantiate nanoscale validity of Caspari Merz theory. The nanoscale imprint phenomena were also observed in the thin film.
%K PZT thin film
%K field-induced displacement
%K nanoscale
%K scanning force microscopy<br>PZT铁电薄膜，
%K 场致位移，
%K 纳米尺度，
%K 扫描力显微术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=31AD5787A6DC1218&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=38B194292C032A66&sid=A67C4D140E145357&eid=9BBC04B2CAF22446&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17